VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 1 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 8 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications state of the art hyperfast recove ry rectifiers designed with optimized performance of forw ard voltage drop, hyperfast recovery time, and soft recovery. ? the planar structure and the plat inum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. ? these devices are intended for use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. ? their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. ? ? ? product summary package to-263ab (d 2 pak), to-262aa i f(av) 8 a v r 600 v v f at i f 1.4 v t rr typ. 15 ns t j max. 175 c diode variation single die to-262aa to-263ab (d 2 pak ) anode 1 3 ba s e cathode 2 n/c anode 1 3 2 n/c v s -8etx06 s p b fv s -8etx06-1p b f absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 143 c 8 a non-repetitive peak surge current i fsm t j = 25 c 110 peak repetitive forward current i fm 18 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 2.3 3.0 i f = 8 a, t j = 150 c - 1.4 1.7 reverse leakage current i r v r = v r rated - 0.3 50 a t j = 150 c, v r = v r rated - 35 500 junction capacitance c t v r = 600 v - 17 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 2 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 100 a/s, v r = 30 v - 15 19 ns i f = 8 a, di f /dt = 100 a/s, v r = 30 v - 16 24 t j = 25 c i f = 8 a ? di f /dt = 200 a/s ? v r = 390 v -17- t j = 125 c - 40 - peak recovery current i rrm t j = 25 c - 2.3 - a t j = 125 c - 4.5 - reverse recovery charge q rr t j = 25 c - 20 - nc t j = 125 c - 100 - reverse recovery time t rr t j = 125 c i f = 8 a ? di f /dt = 600 a/s ? v r = 390 v -31-ns peak recovery current i rrm -12- a reverse recovery charge q rr - 195 - nc thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage ? temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc -1.42 c/w thermal resistance, ? junction to ambient per leg r thja typical socket mount - - 70 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-263ab (d 2 pak) 8etx06s case style to-262aa 8etx06-1
VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 3 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 0.1 1 100 10 i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.5 1.5 3.0 4.0 4.5 3.5 2.0 1.0 0 2.5 t j = 175 c t j = 150 c t j = 25 c 0.001 0.0001 0.01 0.1 1 10 100 1000 i r - reverse current (m a) v r - reverse voltage (v) 100 300 600 400 200 0 500 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 100 300 600 400 200 0 500 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 4 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r ? ? ? ? ? 120 170 160 140 130 150 180 allowable case temperature (c) i f(av) - average forward current (a) dc see note (1) 268 4 01012 square wave (d = 0.50) rated v r applied 0 16 14 12 8 6 4 2 10 20 18 average power loss (w) i f(av) - average forward current (a) 26 1214 dc d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 8 4 010 rms limit 10 40 20 30 50 v r = 390 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a i f = 16 a i f = 8 a t rr (ns) di f /dt (a/s) 1000 100 0 200 250 100 50 150 300 q rr (nc) i f = 16 a i f = 8 a i f = 16 a i f = 8 a di f /dt (a/s) 1000 100 v r = 390 v t j = 125 c t j = 25 c
VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 5 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-8ETX06SPBF, vs-8etx06-1pbf www.vishay.com vishay semiconductors revision: 10-jul-15 6 document number: 94033 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (8 a) 3 - e = single diode 4 - t = to-220, d 2 pak 5 - x = hyperfast rectifier 6 - voltage rating (06 = 600 v) - pbf = lead (pb)-free 7 - s = d 2 pak -1 = to-262 8 - none = tube (50 pieces) trl = tape and reel (left oriented, for d 2 pak package) trr = tape and reel (right oriented, for d 2 pak package) 9 device code 5 1 3 2 4 6 7 8 9 vs- 8 e t x 06 s trl pbf 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95014 part marking information www.vishay.com/doc?95008 packaging information www.vishay.com/doc?95032 spice model www.vishay.com/doc?95393
document number: 95014 for technical questi ons concerning discr ete products, contact: diodes-tech@vishay.com www.vishay.com revision: 31-mar-09 for technical questi ons concerning module products, contact: ind-modules@vishay.com 1 d 2 pak, to-262 outline dimensions vishay high power products dimensions for d 2 pak in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) v ie w a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l ga u ge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: n one (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout mi n . 11.00 (0.43) mi n . 9.65 (0.3 8 ) mi n . 3. 8 1 (0.15) mi n . 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
www.vishay.com for technical questions c oncerning discrete products, contact: diodes-tech@vishay.com document number: 95014 2 for technical questions concer ning module products, contact: ind-modules@vishay.com revision: 31-mar-09 outline dimensions vishay high power products d 2 pak, to-262 dimensions for to-262 in millimeters and inches notes (1) dimensioning and tolerancing as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") per side. these dimensions are measured at the outmost extremes of the plastic body (3) thermal pad contour optional within dimension e, l1, d1 and e1 (4) dimension b1 and c1 apply to base metal only (5) controlling dimension: inches (6) outline conform to jedec to-262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b 1, b 3 ( b , b 2) c1 c section b - b and c - c scale: n one section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (dat u m a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b 2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (t w o die)/open (one die) 2., 4. - cathode 3. - anode
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